منابع مشابه
Single crystal growth of LaCuOS by the flux method
Preparation of single crystals of LaCuOS, that is a transparent p-type semiconductor exhibiting violet-light emission, was demonstrated by flux method using NaCl+KCl(1:1) as flux. The crystals were grown in an alumina tube inserted in an evacuated silica glass tube using the starting materials of La2O2S and Cu2S, as well as the flux and a small amount of K2S that reduces the coloration of cryst...
متن کاملScreening of metal flux for SiC solution growth by a thin-film combinatorial method.
4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux ...
متن کاملGrowth and Characterization of A1−xKxFe2As2 (A = Ba, Sr) Crystals by Self-Flux Method
Crystals of A1−xKxFe2As2 (A=Ba, Sr) with high quality have been grown successfully by self-flux method using FeAs as the flux. The samples have sizes up to 2 mm with flat and shiny surfaces. The X-ray diffraction pattern suggests good crystallization and highly c-axis orientation. The non-superconducting crystals (parent phase) show a spin-density-wave (SDW) instability at 173 K and 130 K for S...
متن کاملA Microfluidic, High Throughput Protein Crystal Growth Method for Microgravity
The attenuation of sedimentation and convection in microgravity can sometimes decrease irregularities formed during macromolecular crystal growth. Current terrestrial protein crystal growth (PCG) capabilities are very different than those used during the Shuttle era and that are currently on the International Space Station (ISS). The focus of this experiment was to demonstrate the use of a comm...
متن کاملModelling of physical phenomena on Si melt during crystal growth process by Directional solidification method
Numerical simulation is a comprehensive tool in modern process development which is extensively used for promotion of crystal growth processes. Multi-crystalline silicon is an important material with advantages of low-production cost and high conversion efficiency of PV solar cells. The control of grains as well as the grain boundaries is particularly important to the crystal quality and thus t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Mineralogical Society of Japan
سال: 1968
ISSN: 1883-7018,0454-1146
DOI: 10.2465/gkk1952.8.397